US Patent Application No: 2012/0145,672

Number of patents in Portfolio can not be more than 2000

PROCESS FOR SELECTIVELY REMOVING NITRIDE FROM SUBSTRATES

ALSO PUBLISHED AS: 9059104

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Abstract

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A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TEL FSI, INC.CHASKA, MN47

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Becker, David Scott Excelsior, US 4 32
Butterbaugh, Jeffery W Eden Prairie, US 16 343
Ratkovich, Anthony S Edina, US 2 0

Cited Art Landscape

Patent Info (Count) # Cites Year
 
TEL FSI, INC. (1)
* 2008/0283,090 Process for treatment of substrates with water vapor or steam 15 2008
 
MICRON TECHNOLOGY, INC. (1)
* 6,087,273 Process for selectively etching silicon nitride in the presence of silicon oxide 18 1999
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
TEL FSI, INC. (2)
8,871,108 Process for removing carbon material from substrates 0 2013
9,017,568 Process for increasing the hydrophilicity of silicon surfaces following HF treatment 0 2014
 
TOKYO ELECTRON LIMITED (1)
* 2012/0248,061 INCREASING MASKING LAYER ETCH RATE AND SELECTIVITY 0 2011
* Cited By Examiner