Process for selectively removing nitride from substrates

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United States of America Patent

PATENT NO 9059104
APP PUB NO 20120145672A1
SERIAL NO

13312148

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Abstract

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A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TEL FSI, INC.CHASKA, MN50

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Becker, David Scott Excelsior, US 8 42
Butterbaugh, Jeffery W Eden Prarie, US 23 441
Ratkovich, Anthony S Edina, US 4 5

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SCREEN HOLDINGS CO., LTD. (2)
2005/0205,115 Resist stripping method and resist stripping apparatus 9 2005
2007/0087,456 Substrate processing method and substrate processing apparatus 7 2006
 
TEL FSI, INC. (7)
6835667 Method for etching high-k films in solutions comprising dilute fluoride species 9 2002
2007/0245,954 Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids 16 2006
7592264 Process for removing material from substrates 7 2006
2008/0008,834 Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids 15 2007
7819984 Process for treatment of substrates with water vapor or steam 11 2008
* 2008/0283,090 Process for treatment of substrates with water vapor or steam 19 2008
2009/0280,235 Tools and methods for processing microelectronic workpieces using process chamber designs that easily transition between open and closed modes of operation 11 2009
 
LAM RESEARCH CORPORATION (1)
6488272 Liquid delivery system emulsifier 7 2000
 
MICRON TECHNOLOGY, INC. (1)
* 6087273 Process for selectively etching silicon nitride in the presence of silicon oxide 21 1999
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
2013/0078,809 SILICON NITRIDE ETCHING IN A SINGLE WAFER APPARATUS 3 2011
 
DAINIPPON SCREEN MFG. CO., LTD. (1)
2004/0261,817 Foreign matter removing apparatus, substrate treating apparatus, and substrate treating method 27 2004
 
FSI INTERNATIONAL, INC. (1)
6406551 Method for treating a substrate with heat sensitive agents 17 1999
 
PROMOS TECHNOLOGIES INC. (1)
6123865 Method for improving etch uniformity during a wet etching process 21 1998
* Cited By Examiner

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