US Patent Application No: 2012/0145,672

PROCESS FOR SELECTIVELY REMOVING NITRIDE FROM SUBSTRATES

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Jun 14, 2012
Publication date
Dec 6, 2011
filing date
13/312,148
serial no
Published
status

Importance

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Abstract

A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.

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Patent Owner(s)

Patent Owner	Address	Total Patents
TEL FSI, INC.	CHASKA, MN	2

International Classification(s)

B44C:PRODUCING DECORATIVE EFFECTS

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[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Becker, David Scott	Excelsior, MN	4	31
Butterbaugh, Jeffery W	Eden Prairie, MN	15	270
Ratkovich, Anthony S	-	1	0

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