HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR ELEMENT ON TILT SUBSTRATE AND FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Jun 14, 2012
app pub date -
Aug 27, 2010
filing date -
Aug 27, 2009
priority date (Note) -
Abandoned
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Abstract
Provided are a high-quality non-polar/semi-polar semiconductor device and a manufacturing method thereof. A template layer is formed on a corresponding off-axis of the sapphire crystal plane tilted in a predetermined direction to reduce the defect density of the semiconductor device and improve the internal quantum efficiency and light extraction efficiency thereof. In the method for manufacturing the semiconductor device, a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The crystal plane of the sapphire substrate is tilted in a predetermined direction, and the template layer includes a nitride semiconductor layer and a GaN layer on the tilted sapphire substrate.
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