CONFINED RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS
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United States of America Patent
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app pub date -
Feb 23, 2012
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Jul 26, 2010
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Abstract
Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in the via by performing a process that includes providing a germanium amidinate precursor and a first reactant to a process chamber having the memory cell structure therein and providing an antimony ethoxide precursor and a second reactant to the process chamber subsequent to removing excess germanium.
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