PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL GERMANIUM-CONTAINING LAYER AND METHODS FOR FORMING THE SAME
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United States of America Patent
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Issued Date -
Jun 21, 2012
app pub date -
Dec 15, 2010
filing date -
Dec 15, 2010
priority date (Note) -
Abandoned
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Abstract
A germanium-containing layer is provided between a p-doped silicon-containing layer and a transparent conductive material layer of a photovoltaic device. The germanium-containing layer can be a p-doped silicon-germanium alloy layer or a germanium layer. The germanium-containing layer has a greater atomic concentration of germanium than the p-doped silicon-containing layer. The presence of the germanium-containing layer has the effect of reducing the series resistance and increasing the shunt resistance of the photovoltaic device, thereby increasing the fill factor and the efficiency of the photovoltaic device. In case a silicon-germanium alloy layer is employed, the closed circuit current density also increases.
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