METHOD FOR PRODUCING RECYCLED SUBSTRATE, RECYCLED SUBSTRATE, NITRIDE SEMICONDUCTOR ELEMENT, AND LAMP
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United States of America Patent
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Issued Date -
Jun 21, 2012
app pub date -
Sep 7, 2010
filing date -
Sep 18, 2009
priority date (Note) -
Abandoned
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Abstract
A laminated semiconductor wafer (10) to be processed is provided with a substrate (110) and a laminated semiconductor layer (100) formed on the substrate (110). The laminated semiconductor wafer (10) is heated to a temperature above the sublimation point of the laminated semiconductor layer (100) and under the melting point of the substrate (110). As a result, in the laminated semiconductor wafer (10), the laminated semiconductor layer (100) sublimes, and the laminated semiconductor layer (100) is eliminated from the substrate (110). In this way, the laminated semiconductor layer is eliminated from the laminated semiconductor wafer while suppressing damage to the substrate.
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