HIGH INDIUM CONTENT TRANSISTOR CHANNELS
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United States of America Patent
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Issued Date -
Jun 21, 2012
app pub date -
Dec 15, 2010
filing date -
Dec 15, 2010
priority date (Note) -
Abandoned
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Abstract
The present disclosure relates to the field of microelectronic transistor fabrication and, more particularly, to the formation of high mobility transistor channels from high indium content alloys, wherein the high indium content transistor channels are achieved with a barrier layer that can substantially lattice match with the high indium content transistor channel.
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