VERTICAL LIGHT EMITTING DIODE (VLED) DIE AND METHOD OF FABRICATION

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United States of America Patent

APP PUB NO 20120168714A1
SERIAL NO

12983436

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Abstract

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A vertical light emitting diode (VLED) die includes a first metal having a first surface and an opposing second surface; a second metal on the second surface of the first metal; a p-type semiconductor layer on the first surface of the first metal; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.

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Patent Owner(s)

Patent OwnerAddress
SEMILEDS OPTOELECTRONICS CO LTD7F NO 13 KE JUNG RD CHU-NAN SITE HSINCHU SCIENCE PARK CHU-NAN MIAO-LI COUNTY 350

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Chao-Chen Hsinchu City, TW 42 488
Chu, Chen-Fu Hsinchu City, TW 77 1325
Chu, Jiunn-Yi Chubei City, TW 21 234

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