US Patent Application No: 2012/0175,586

Number of patents in Portfolio can not be more than 2000

SILICON-GERMANIUM, QUANTUM-WELL, LIGHT-EMITTING DIODE

ALSO PUBLISHED AS: 8476647

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Abstract

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A silicon-germanium, quantum-well, light-emitting diode (120). The light-emitting diode (120) includes a p-doped portion (410), a quantum-well portion (420), and an p-doped portion (430). The quantum-well portion (420) is disposed between the p-doped portion (410) and the n-doped portion (430). The quantum-well portion (420) includes a carrier confinement region that is configured to facilitate luminescence with emission of light (344) produced by direct recombination (340) of an electron (314) with a hole (324) confined within the carrier confinement region. The p-doped portion (410) includes a first alloy of silicon-germanium, and the n-doped portion (430) includes a second alloy of silicon-germanium.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.HOUSTON, TX27704

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bratkovski, Alexandre M Mountain View, CA 241 492
Osipov, Viatcheslav - 9 2

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (2)
8,471,270 Indirect-bandgap-semiconductor, light-emitting diode 0 2009
8,476,647 Silicon-germanium, quantum-well, light-emitting diode 0 2009