Silicon-germanium, quantum-well, light-emitting diode

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United States of America Patent

PATENT NO 8476647
APP PUB NO 20120175586A1
SERIAL NO

13259455

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Abstract

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A silicon-germanium, quantum-well, light-emitting diode. The light-emitting diode includes a p-doped portion, a quantum-well portion, and an p-doped portion. The quantum-well portion is disposed between the p-doped portion and the n-doped portion. The quantum-well portion includes a carrier confinement region that is configured to facilitate luminescence with emission of light produced by direct recombination with a hole confined within the carrier confinement region. The p-doped portion includes a first alloy of silicon-germanium, and the n-doped portion includes a second alloy of silicon-germanium.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LPHOUSTON, TX9487

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bratkovski, Alexandre M Mountain View, US 157 951
Osipov, Viatcheslav E. Palo Alto, US 5 7

Cited Art Landscape

Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
* 2009/0014,743 METHOD OF MAKING A LIGHT-EMITTING DIODE 3 2008
 
SEMILEDS CORPORATION (1)
* 2006/0154,392 Method of making a vertical light emitting diode 21 2005
 
SEMILEDS OPTOELECTRONICS CO., LTD. (1)
* 2011/0284,867 LIGHT-EMITTING DIODE WITH INCREASED LIGHT EXTRACTION 19 2011
 
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP (1)
* 2012/0175,586 SILICON-GERMANIUM, QUANTUM-WELL, LIGHT-EMITTING DIODE 2 2009
 
SAMSUNG ELECTRONICS CO., LTD. (1)
* 8030664 Light emitting device 6 2007
 
HITACHI, LTD. (1)
* 5523592 Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same 94 1994
 
AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (1)
* 2006/0270,086 Carrier confinement in light-emitting group IV semiconductor devices 1 2005
* Cited By Examiner

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