METHOD AND IMAGE SENSOR WITH EXTENDED PIXEL DYNAMIC RANGE INCORPORATING TRANSFER GATE WITH POTENTIAL WELL
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United States of America Patent
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app pub date -
Mar 27, 2012
filing date -
May 4, 2006
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Abandoned
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Abstract
A charge transfer transistor includes: a first diffusion region and a second diffusion region; a gate for controlling a charge transfer from the first diffusion region to the second diffusion region by a control signal; and a potential well incorporated under the gate, wherein the first diffusion region is a pinned photodiode. A pixel of an image sensor includes: a photodiode for generating and collecting a photo generated charge; a floating diffusion region for serving as a photo generated charge sensing node; a transfer gate for controlling a charge transfer from the photodiode to the floating diffusion region by a control signal; and a potential well incorporated under the transfer gate.
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