US Patent Application No: 2012/0183,743

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TWO-DIMENSIONAL PATTERNING EMPLOYING SELF-ASSEMBLED MATERIAL

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Abstract

A first nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running along a first direction is formed from first self-assembling block copolymers within a first layer. The first layer is filled with a filler material and a second layer is deposited above the first layer containing the first nanoscale nested line structure. A second nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running in a second direction is formed from second self-assembling block copolymers within the second layer. The composite pattern of the first nanoscale nested line structure and the second nanoscale nested line structure is transferred into an underlayer beneath the first layer to form an array of structures containing periodicity in two directions.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INTERNATIONAL BUSINESS MACHINES CORPORATIONARMONK, NY68180

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dalton, Timothy J Ridgefield, CT 181 755
Doris, Bruce B Hopewell Junction, NY 453 1993
Kim, Ho-Cheol San Jose, CA 75 227
Radens, Carl LaGrangeville, NY 102 510

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