US Patent Application No: 2012/0186,354

Number of patents in Portfolio can not be more than 2000

CAPACITANCE TYPE PRESSURE SENSOR AND METHOD FOR MANUFACTURING A CAPACITANCE TYPE PRESSURE SENSOR

ALSO PUBLISHED AS: 8601879
1 Status Updates

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
ROHM CO., LTD.KYOTO2645

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
OKADA, Mizuho - 22 22

Cited Art Landscape

Patent Info (Count) # Cites Year
 
DENSO CORPORATION (1)
* 6,495,389 Method for manufacturing semiconductor pressure sensor having reference pressure chamber 20 2001
 
ROHM CO., LTD. (2)
* 2013/0062,713 PRESSURE SENSOR AND METHOD FOR MANUFACTURING PRESSURE SENSOR 3 2011
* 2013/0193,534 CAPACITIVE PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME 1 2013
 
HITACHI, LTD. (1)
* 6,877,383 Capacitive type pressure sensor 17 2002
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
ROHM CO., LTD. (2)
* 8,975,714 Capacitive pressure sensor and method of manufacturing the same 0 2013
* 2013/0193,534 CAPACITIVE PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME 1 2013
* Cited By Examiner