Capacitance type pressure sensor and method for manufacturing a capacitance type pressure sensor

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United States of America Patent

PATENT NO 8601879
APP PUB NO 20120186354A1
SERIAL NO

13359448

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
ROHM CO., LTD.KYOTO3135

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okada, Mizuho Kyoto, JP 12 45

Cited Art Landscape

Patent Info (Count) # Cites Year
 
DENSO CORPORATION (1)
* 6495389 Method for manufacturing semiconductor pressure sensor having reference pressure chamber 22 2001
 
ROHM CO., LTD. (2)
* 2013/0062,713 PRESSURE SENSOR AND METHOD FOR MANUFACTURING PRESSURE SENSOR 7 2011
* 2013/0193,534 CAPACITIVE PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME 3 2013
 
HITACHI, LTD. (1)
* 6877383 Capacitive type pressure sensor 25 2002
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
HONEYWELL INTERNATIONAL INC. (1)
9513242 Humidity sensor 0 2014
* Cited By Examiner

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