US Patent Application No: 2012/0186,354

CAPACITANCE TYPE PRESSURE SENSOR AND METHOD FOR MANUFACTURING A CAPACITANCE TYPE PRESSURE SENSOR

Stats

Jul 26, 2012
Publication date
Jan 26, 2012
filing date
13/359,448
serial no
Published
status

Importance

Loading Importance Indicators... loading....

Abstract

A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.

Loading the Abstract Image... loading....

First Claim

loading....

Related Publications

Loading Related Publications... loading....

Patent Owner(s)

Patent Owner	Address	Total Patents
ROHM CO., LTD.	KYOTO	2958

International Classification(s)

[Classification Symbol]

[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
OKADA, Mizuho	-	17	14

Patent Citation Ranking

Forward Cites

No Forward Cites to Display

Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
3.5 Year Payment	$1600.00	$800.00	$400.00	Jan 26, 2016
7.5 Year Payment	$3600.00	$1800.00	$900.00	Jan 26, 2020
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Jan 26, 2024

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 3.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 7.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00