Substrate treatment method and substrate treatment apparatus

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8883653
APP PUB NO 20120187083A1
SERIAL NO

13353962

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Abstract

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An inventive substrate treatment method includes a silylation step of supplying a silylation agent to a substrate, and an etching step of supplying an etching agent to the substrate after the silylation step. The method may further include a repeating step of repeating a sequence cycle including the silylation step and the etching step a plurality of times. The cycle may further include a rinsing step of supplying a rinse liquid to the substrate after the etching step. The cycle may further include a UV irradiation step of irradiating the substrate with ultraviolet radiation after the etching step. The method may further include a pre-silylation or post-silylation UV irradiation step of irradiating the substrate with the ultraviolet radiation before or after the silylation step.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SCREEN HOLDINGS CO., LTD.JP716

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashizume, Akio Kyoto, JP 24 98

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SCREEN HOLDINGS CO., LTD. (1)
2009/0194,234 SUBSTRATE TREATMENT APPARATUS, AND SUBSTRATE SUPPORT TO BE USED FOR THE APPARATUS 4 2009
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
* 4803181 Process for forming sub-micrometer patterns using silylation of resist side walls 83 1987
* 4871418 Process for fabricating arbitrarily shaped through holes in a component 26 1988
 
NEC CORPORATION (1)
2003/0209,738 Semiconductor device having silicon-including metal wiring layer and its manufacturing method 23 2002
 
EUV LLC (1)
* 6673525 Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths 1 2000
 
TOKYO OHKA KOGYO CO., LTD. (1)
2011/0195,190 SURFACE TREATMENT LIQUID, SURFACE TREATMENT METHOD, HYDROPHOBILIZATION METHOD, AND HYDROPHOBILIZED SUBSTRATE 6 2009
 
RENESAS ELECTRONICS CORPORATION (5)
7687917 Single damascene structure semiconductor device having silicon-diffused metal wiring layer 4 2003
7737555 Semiconductor method having silicon-diffused metal wiring layer 3 2006
7842602 Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method 2 2007
8115318 Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method 1 2010
8642467 Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method 1 2012
 
KABUSHIKI KAISHA TOSHIBA (1)
2007/0082,491 Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device 8 2006
 
FUJITSU LIMITED (1)
* 4349609 Electronic device having multilayer wiring structure 74 1980
 
TOKYO ELECTRON LIMITED (5)
2008/0057,728 Process For Fabricating Semiconductor Device 8 2005
2008/0268,655 Method for Manufacturing Semiconductor Device 1 2005
2007/0077,768 Substrate processing method 5 2006
* 2010/0099,256 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 2 2009
* 2012/0264,308 ETCHING METHOD, ETCHING APPARATUS AND STORAGE MEDIUM 2 2012
* Cited By Examiner

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