Integration of structurally-stable isolated capacitive micromachined ultrasonic transducer (CMUT) array cells and array elements

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United States of America Patent

PATENT NO 8563345
APP PUB NO 20120187508A1
SERIAL NO

13419216

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Abstract

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A method for forming a capacitive micromachined ultrasonic transducer (CMUT) includes forming multiple CMUT elements in a first semiconductor-on-insulator (SOI) structure. Each CMUT element includes multiple CMUT cells. The first SOI structure includes a first handle wafer, a first buried layer, and a first active layer. The method also includes forming a membrane over the CMUT elements and forming electrical contacts through the first handle wafer and the first buried layer. The electrical contacts are in electrical connection with the CMUT elements. The membrane could be formed by bonding a second SOI structure to the first SOI structure, where the second SOI structure includes a second handle wafer, a second buried layer, and a second active layer. The second handle wafer and the second buried layer can be removed, and the membrane includes the second active layer.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL SEMICONDUCTOR CORPORATEDSANTA CLARA CA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adler, Steven J Saratoga, US 17 332
Johnson, Peter Sunnyvale, US 187 3016
Mostafazadeh, Shahram San Jose, US 53 2509
Percin, Gokhan Los Gatos, US 13 531

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