US Patent Application No: 2012/0187,546

Number of patents in Portfolio can not be more than 2000

BILAYER TRENCH FIRST HARDMASK STRUCTURE AND PROCESS FOR REDUCED DEFECTIVITY

ALSO PUBLISHED AS: 8796150

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Abstract

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A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INTERNATIONAL BUSINESS MACHINES CORPORATIONARMONK, NY45685

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AKINMADE-YUSUFF, Hakeem BS - 5 6
Choi, Samuel Sung Shik - 4 2
Engbrecht, Edward R Austin, TX 5 29
Fitzsimmons, John A Poughkeepsie, NY 133 632

Cited Art Landscape

Patent Info (Count) # Cites Year
 
APPLIED MATERIALS, INC. (1)
* 2003/0119,307 Method of forming a dual damascene structure 39 2002
 
IMEC (1)
* 2006/0264,033 Dual damascene patterning method 9 2006
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 2005/0079,701 METHOD FOR FORMING DAMASCENE STRUCTURE UTILIZING PLANARIZING MATERIAL COUPLED WITH COMPRESSIVE DIFFUSION BARRIER MATERIAL 2 2004
 
TOKYO ELECTRON LIMITED (1)
* 2010/0216,310 Process for etching anti-reflective coating to improve roughness, selectivity and CD shrink 1 2009
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
GLOBALFOUNDRIES INC. (1)
* 8,883,631 Methods of forming conductive structures using a sacrificial material during a metal hard mask removal process 0 2013
 
RENESAS ELECTRONICS CORPORATION (1)
* 8,513,114 Method for forming a dual damascene interconnect structure 0 2012
* Cited By Examiner