US Patent Application No: 2012/0187,546

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BILAYER TRENCH FIRST HARDMASK STRUCTURE AND PROCESS FOR REDUCED DEFECTIVITY

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Abstract

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A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INTERNATIONAL BUSINESS MACHINES CORPORATIONARMONK, NY75111

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AKINMADE-YUSUFF, Hakeem BS - 5 3
Choi, Samuel Sung Shik - 2 1
Engbrecht, Edward R Austin, TX 4 26
Fitzsimmons, John A Poughkeepsie, NY 125 612

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
RENESAS ELECTRONICS CORPORATION (1)
8,513,114 Method for forming a dual damascene interconnect structure 0 2012

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