A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.
Please note there is up to 60 days of latency in this Status indicator for certain status conditions. You can obtain up-to-date Status indicator readings by ordering PAIR for the file.
An application with the status "Published" (which means it is pending) may be recently abandoned, but not yet updated to reflect its abandoned status. However, an application filed less than one year ago is unlikely to be abandoned.
A patent with the status "Granted" may be recently expired, but not yet updated to reflect its expired status. However, it is highly unlikely a patent less than 3.5 years old would be expired.
An application with the status "Abandoned" is almost always current, but there is a small chance it was recently revived and the status not yet updated.
This priority date is an estimated earliest
priority date and is purely an estimation. This date should not be
taken as legal conclusion. No representations are made as to the
accuracy of the date listed. Please consult a legal professional
before relying on this date.