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Abstract

A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.

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First Claim