Oscillator and semiconductor integrated circuit device
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United States of America Patent
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May 6, 2014
Grant Date -
Aug 9, 2012
app pub date -
Feb 2, 2012
filing date -
Feb 9, 2011
priority date (Note) -
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Abstract
An oscillator and a semiconductor integrated circuit device with an internal oscillator capable of compensating the temperature characteristics even when there is a large parasitic capacitance too large to ignore directly between the output terminals of the oscillator. In an oscillator containing an inductance element L, and a capacitive element C, and an amplifier each coupled in parallel across a first and second terminal, the amplifier amplifies the resonance generated by the inductance element and capacitive element and issues an output from the first terminal and the second terminal, and in which a first resistance element with a larger resistance value than the parasitic resistance of the inductance element between the first terminal and the second terminal, is coupled in serial with the capacitive element between the first terminal and the second terminal.
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