METHOD FOR PRODUCING AN EMITTER ELECTRODE FOR A CRYSTALLINE SILICON SOLAR CELL AND CORRESPONDING SILICON SOLAR CELL

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United States of America Patent

SERIAL NO

13371139

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Abstract

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In a method for producing a front-side emitter electrode as front contact for a silicon solar cell on a silicon wafer, a depression is produced in the front side of said silicon wafer. A front-side n-doped silicon layer and an antireflection layer are then produced. A paste is then introduced into the depression, said paste containing electrically conductive metal particles and etching glass frit. Said paste, as a result of momentary heating, etches through the antireflection layer to the n-doped silicon layer making electrical contact with the latter. Afterwards, electrically conductive front contact metal is galvanically attached as front contact onto the heat-treated paste in the depression.

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Patent Owner(s)

Patent OwnerAddress
GEBR SCHMID GMBH72250 FREUDENSTADT

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haverkamp, Helge Herrenberg, DE 3 10
Kieninger, Kay Weiler, DE 1 2
Mitzinneck, Petra Karlsruhe, DE 2 12
Sollner, Jurgen Wangen, DE 5 33

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