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Abstract

A method of performing a filament-assisted chemical vapor deposition process is described. The method includes providing a substrate holder in a process chamber of a chemical vapor deposition system, providing a non-ionizing heat source separate from the substrate holder in the process chamber, disposing a substrate on the substrate holder, introducing a film forming composition to the process chamber, thermally fragmenting the film forming composition using the non-ionizing heat source, and forming a thin film on the substrate in the process chamber. The non-ionizing heat source includes a gas heating device through and/or over which the film forming composition flows. The method further includes remotely producing a reactive composition, and introducing the reactive composition to the process chamber to interact with the substrate, wherein the reactive composition is introduced sequentially and/or simultaneously with the introducing the film forming composition.

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First Claim