METHOD FOR PRODUCING INDIUM TIN OXIDE LAYER WITH CONTROLLED SURFACE RESISTANCE
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United States of America Patent
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Issued Date -
Aug 23, 2012
app pub date -
Feb 18, 2011
filing date -
Feb 18, 2011
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Abandoned
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Abstract
The invention relates to a method for producing a transparent indium tin oxide conductive layer on a substrate. The method involves using a target having a low indium-to-tin ratio in a low temperature manufacturing process (less than 200° C.), and introducing a plasma gas and a reaction gas into the reaction chamber to allow sputtering of an indium tin oxide layer on the substrate under a low oxygen environment, followed by subjecting the sputtered substrate to a heat treatment at 150˜200° C. for 60˜90 minutes. The indium tin oxide layer thus produced will crystallize completely and have the advantageous properties of low surface resistance and high uniformity.
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