METHODS FOR INCREASING BOTTOM ELECTRODE PERFORMANCE IN CARBON-BASED MEMORY DEVICES
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 6, 2012
app pub date -
Aug 8, 2011
filing date -
Mar 2, 2011
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
In some aspects, a method of forming a reversible resistance-switching metal-insulator-metal (“MIM”) stack is provided, the method including: forming a first conducting layer comprising a titanium nitride material having between about 50% Ti and about 95% Ti, forming a carbon nano-tube (CNT) material above the first conducting layer, forming a second conducting layer above the CNT material, and etching the first conducting layer, CNT material and second conducting layer to form the MIM stack. Numerous other aspects are provided.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully