Uniform multilayer graphene by chemical vapor deposition

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United States of America Patent

PATENT NO 10886126
APP PUB NO 20120225296A1
SERIAL NO

13225135

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Abstract

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A method of producing uniform multilayer graphene by chemical vapor deposition (CVD) is provided. The method is limited in size only by CVD reaction chamber size and is scalable to produce multilayer graphene films on a wafer scale that have the same number of layers of graphene throughout substantially the entire film. Uniform bilayer graphene may be produced using a method that does not require assembly of independently produced single layer graphene. The method includes a CVD process wherein a reaction gas is flowed in the chamber at a relatively low pressure compared to conventional processes and the temperature in the reaction chamber is thereafter decreased relatively slowly compared to conventional processes. One application for uniform multilayer graphene is transparent conductors. In processes that require multiple transfers of single layer graphene to achieve multilayer graphene structures, the disclosed method can reduce the number of process steps by at least half.

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Patent OwnerAddress
THE REGENTS OF THE UNIVERSITY OF MICHIGANINNOVATION PARTNERSHIPS 1600 HURON PARKWAY 2ND FLOOR ANN ARBOR MI 48109-2590

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Kyunghoon Ann Arbor, US 85 990
Lee, Seunghyun Ann Arbor, US 196 487
Zhong, Zhaohui Ann Arbor, US 13 704

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