Semiconductor die with integrated electro-static discharge device
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United States of America Patent
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Jul 9, 2013
Grant Date -
Sep 13, 2012
app pub date -
May 16, 2012
filing date -
Oct 16, 2009
priority date (Note) -
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Abstract
A semiconductor die is described. This semiconductor die includes an electro-static discharge (ESD) device with a metal component coupled to an input-output (I/O) pad, and coupled to a ground voltage via a signal line. Moreover, adjacent edges of the metal component and the I/O pad are separated by a spacing that defines an ESD gap. When a field-emission or ionization current flows across the ESD gap, the metal component provides a discharge path to the ground voltage for transient ESD signals. Furthermore, the ESD gap is at least partially enclosed so that there is gas in the ESD gap.
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