CHALCOGEN COMPOUND POWDER, CHALCOGEN COMPOUND PASTE, PROCESS FOR PRODUCING CHALCOGEN COMPOUND POWDER, PROCESS FOR PRODUCING CHALCOGEN COMPOUND PASTE, AND PROCESS FOR PRODUCING THIN FILM OF CHALCOGEN COMPOUND

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United States of America Patent

APP PUB NO 20120231169A1
SERIAL NO

13502098

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Abstract

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The chalcogen compound has a high content of carbon and thus leads to a high resistance value. Chalcogen compound powder containing Cu—In—(Ga)—Se and having an average particle diameter (D50) of less than 0.5 μm and a carbon content of 0.2% or less by mass in the powder is obtained in a way that metal hydroxide powder having an average primary particle diameter of 0.3 μm or less, and one or more kinds selected from a group consisting of selenium and selenium compounds are heated to 220° C. or more in a reducing gas.

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Patent Owner(s)

Patent OwnerAddress
DOWA HOLDINGS CO LTD4-14-1 SOTOKANDA CHIYODA-KU TOKYO 101-0021

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujino, Takatoshi Okayama-city, JP 9 44
Ishikawa, Yuichi Tamano-city, JP 103 1788

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