CHALCOGEN COMPOUND POWDER, CHALCOGEN COMPOUND PASTE, PROCESS FOR PRODUCING CHALCOGEN COMPOUND POWDER, AND PROCESS FOR PRODUCING CHALCOGEN COMPOUND PASTE
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United States of America Patent
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Issued Date -
Sep 20, 2012
app pub date -
Dec 7, 2010
filing date -
Dec 7, 2010
priority date (Note) -
Abandoned
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Abstract
Chalcogen compound powder containing Cu—In—Ga—Se and having an average particle diameter (DSEM) of 80 nm or less and a low content of carbon is obtained by forming a mixed solvent by mixing together at least any one of a mixture of copper salt and indium salt, a composite hydroxide of copper and indium, and a composite oxide of copper and indium, any one of selenium and a selenium compound, and a solvent having a boiling point of 250° C. or less, and heating the mixed solvent to a temperature of 220° C. to 500° C. A thin film containing Cu—In—Ga—Se and having low resistance is obtained by using paste of the chalcogen compound powder.
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