SILICON ON INSULATOR STRUCTURES HAVING HIGH RESISTIVITY REGIONS IN THE HANDLE WAFER
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United States of America Patent
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Issued Date -
Sep 20, 2012
app pub date -
Mar 13, 2012
filing date -
Mar 16, 2011
priority date (Note) -
Abandoned
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Abstract
Silicon on insulator structures having a high resistivity region in the handle wafer of the silicon on insulator structure are disclosed. Methods for producing such silicon on insulator structures are also provided. Exemplary methods involve creating a non-uniform thermal donor profile and/or modifying the dopant profile of the handle wafer to create a new resistivity profile in the handle wafer. Methods may involve one or more SOI manufacturing steps or electronic device (e.g., RF device) manufacturing steps.
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