CARBON MATERIAL AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20120237772A1
SERIAL NO

13511402

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Abstract

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When treated with a halogen gas, a carbon material can inhibit emission of an impurity after the treatment. A method of manufacturing the carbon material is also provided. A carbon material is subjected to an annealing process under a reduced pressure of from 1 to 10000 Pa in a H2 gas atmosphere at 500° C. to 1200° C. The duration of the annealing process is from 1 minute to 20 hours. This makes it possible to control the concentration of the halogen emitted, such as chlorine, to 5 ppb or less.

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Patent Owner(s)

Patent OwnerAddress
TOYO TANSO CO LTDOSAKA-SHI OSAKA 555-0011

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishii, Takugo Osaka-shi, JP 2 0
Matsunaga, Hiroaki Kanonji-shi, JP 7 46
Setani, Kaoru Kanonji-shi, JP 5 0
Takeda, Akiyoshi Kanonji-shi, JP 8 23

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