FLASH MEMORY AND FLASH MEMORY ACCESSING METHOD

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United States of America Patent

APP PUB NO 20120246384A1
SERIAL NO

13053194

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Abstract

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A flash memory accessing method is provided. The method includes: firstly, dividing the flash memory into a primary storage area and a backup storage area, wherein the difference between a first start address of the primary storage area and a second start address of the backup storage area is an offset address not equal to zero; reading the flash memory according to a address pointer equal to the first start address so as to obtain the boot data; making the electronic apparatus perform a boot sequence according to the boot data; then, detecting whether the boot sequence is normal or not, and when the boot sequence is abnormal, providing the flash memory with changing the read pointer to the second start address according to an offset address to read the backup boot data.

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Patent Owner(s)

Patent OwnerAddress
WINBOND ELECTRONICS CORPNO 8 KEYA 1ST RD DAYA DISTRICT CENTRAL TAIWAN SCIENCE PARK TAICHUNG CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Chi-Cheng Miaoli County, TW 59 274
Yeh, Jun-Lin Hsinchu County, TW 22 902

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