Group III nitride semiconductor light-emitting device

United States of America Patent

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Nov 19, 2013
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Oct 4, 2012
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Mar 28, 2012
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Mar 30, 2011

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Abstract

A Group III nitride semiconductor light-emitting device includes a light-emitting layer having a multiple quantum structure including an Al_xGa_1-xN (0

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Patent Owner	Address
TOYODA GOSEI CO LTD	KIYOSU-SHI AICHI 452-8564

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Nishijima, Kazuki	Kiyosu, JP	8	267
Okuno, Koji	Kiyosu, JP	63	362
Toyoda, Yusuke	Kiyosu, JP	20	108

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Group III nitride semiconductor light-emitting device

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United States of America Patent

13433215

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PATENT NO	8586965
APP PUB NO	20120248407A1
SERIAL NO	13433215
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
November 19, 2013	US,8586965,B2 US8586965B2	GRANTED PATENT AS SECOND PUBLICATION
October 04, 2012	US,20120248407,A1 US20120248407A1	FIRST PUBLISHED PATENT APPLICATION

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13433215

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