Method for Increasing Reverse Breakdown Voltage Between P-Well and N-Well and related Semiconductor Silicon Devices
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United States of America Patent
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Issued Date -
Oct 4, 2012
app pub date -
Sep 22, 2011
filing date -
Mar 29, 2011
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Abstract
A method for improving the reverse breakdown voltage between P-well and N-well and related semiconductor silicon devices are described herein. In one aspect, a semiconductor silicon device comprises a substrate; a P-well in said substrate; an N-well in said substrate; wherein said N-well and said P-well are separated by said substrate. In another aspect, a method for increasing the reverse breakdown voltage from P-well to N-well comprises: providing a substrate; forming an N-well and a P-well in said substrate and separating said N-well and said P-well by said substrate.
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