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Abstract

In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed. A semiconductor light-emitting chip is obtained by forming, on an element-group formation substrate on a front surface of which semiconductor light-emitting elements are formed, the front surface being composed of a C-plane of a sapphire single crystal, dividing grooves extending toward a first direction along an M-plane of the sapphire single crystal and the front surface of the substrate from a substrate front surface side (step 103), forming first modified regions extending toward the first direction and second modified regions extending along the substrate front surface and toward a second direction different from the first direction in the substrate (step 104 and step 105), and dividing the element-group formation substrate using the first modified regions and the second modified regions (step 106).

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