Method for forming a dual damascene interconnect structure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 20, 2013
Grant Date -
Nov 1, 2012
app pub date -
Mar 20, 2012
filing date -
Apr 29, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An improved method of forming a semiconductor device including an interconnect layer formed using multilayer hard mask comprising metal mask and dielectric mask is provided. To form the second opening pattern being aligned to the first pattern, after the multilayer hard mask is used at the first step, then the dielectric mask is used to form a damascene structure in an insulator layer at the second step followed by removing the metal mask.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully