Patterning method for high density pillar structures
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United States of America Patent
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Dec 11, 2012
Grant Date -
Nov 1, 2012
app pub date -
May 3, 2012
filing date -
Jan 12, 2010
priority date (Note) -
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status (Latency Note)
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Abstract
A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.
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