MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Nov 1, 2012
app pub date -
Apr 27, 2011
filing date -
Apr 27, 2011
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Abstract
A manufacturing method for a semiconductor device includes: arranging a plurality of silicon substrates having a sacrifice layer in a reaction chamber in such a manner that surfaces of silicon substrates face each other; introducing an etching gas into the reaction chamber; reacting the etching gas and the sacrifice layer in each silicon substrate so that the sacrifice layer is dry-etched; and arranging a partition member in the reaction chamber to partition a predetermined range between adjacent silicon substrates. The partition member has a property in such a manner that a water molecule hardly penetrates the partition member. The water molecule is a reaction product between the etching gas and the sacrifice layer.
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