Method and Device for Treating Silicon Substrates

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United States of America Patent

APP PUB NO 20120276749A1
SERIAL NO

13518660

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Abstract

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In a method for processing monocrystalline silicon wafers, which are transported while lying flat along a horizontal transport path, etching solution for texturing the surface is applied from above by means of nozzles or the like. The etching solution is applied from above several times in succession onto the upper side of the silicon substrates, remains there and reacts with the silicon substrate.

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Patent Owner(s)

Patent OwnerAddress
GEBR SCHMID GMBH72250 FREUDENSTADT

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Habermann, Dirk Kirchzarten, DE 10 30
Izaaryene, Maher Freudenstadt, DE 1 0
Schoch, Martin Freudenstadt, DE 5 143
Stein, Friedhelm Lossburg, DE 1 0

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