Low Power Memory Device

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United States of America Patent

SERIAL NO

13466082

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Abstract

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“A method of operation within a memory device comprises receiving address information and corresponding enable information. The address information includes a row address that specifies a row of storage cells within a storage array of the memory device, and the enable information includes first and second enable values that correspond respectively to first and second storage locations within the row of storage cells. The method involves selectively transferring data between the first storage location and the sense amplifier circuitry if the first enable value is in an enable state and transferring data between the second storage location and the sense amplifier circuitry if the second enable value is in the enable state. The states of the first and second enable values may be separately controlled.”

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Patent Owner(s)

Patent OwnerAddress
RAMBUS INC1050 ENTERPRISE WAY SUITE 700 SUNNYVALE CA 94089

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hampel, Craig E Los Altos, US 274 7129
Tsern, Ely K Los Altos, US 164 5376
Ware, Frederick A Los Altos Hills, US 760 10960

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