Methods of forming a stratified photodiode for high resolution CMOS image sensor implemented with STI technology
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United States of America Patent
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Apr 22, 2014
Grant Date -
Nov 22, 2012
app pub date -
Jul 31, 2012
filing date -
Dec 29, 2005
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Abstract
A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions of the first conductivity type, and a pinning layer. The multiple doping regions of the second conductivity type are formed to different depths in the semi-conductive layer. The multiple doping regions of the first conductivity type are disposed between the multiple doping regions of the second conductivity type and form multiple junction capacitances without full depletion. In particular, the stratified doping arrangement allows the photodiode to have a small size, high charge storage capacity, low dark current, and low operation voltages.
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