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Abstract

A method for manufacturing a solar cell includes

providing a first conductivity type doped crystalline silicon wafer,depositing on one side a first intrinsic a-Si:H buffer layer, followed by a second conductivity type doped a-Si:H layer,turning over the wafer and depositing on the opposite side a surface passivating anti-reflection coating,applying a first mask having a grid opening on the second conductivity type doped a-Si:H covered surface of the wafer,dry etching to remove the second conductivity type doped a-Si:H layer not covered by the first mask,while maintaining the first mask in position: depositing a second intrinsic buffer layer of a-Si:H,depositing a first conductivity type doped a-Si:H layer.

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First Claim