Punch-through diode steering element
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United States of America Patent
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Nov 5, 2013
Grant Date -
Nov 29, 2012
app pub date -
Aug 9, 2012
filing date -
Oct 20, 2009
priority date (Note) -
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Abstract
A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The punch-through diode allows bipolar operation of a cross-point memory array. The punch-through diode may have a symmetrical non-linear current/voltage relationship. The punch-through diode has a high current at high bias for selected cells and a low leakage current at low bias for unselected cells. Therefore, it is compatible with bipolar switching in cross-point memory arrays having resistive switching elements. The punch-through diode may be a N+/P−/N+ device or a P+/N−/P+ device.
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