Light-emitting diode with strain-relaxed layer for reducing strain in active layer
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United States of America Patent
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Feb 18, 2014
Grant Date -
Dec 6, 2012
app pub date -
Jun 6, 2011
filing date -
Jun 6, 2011
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Abstract
A light-emitting diode (LED) includes a first conductivity type semiconductor layer, a strain-relaxed layer over the first conductivity type semiconductor layer, an active layer over the strain-relaxed layer, and a second conductivity type semiconductor layer over the active layer. The strain-relaxed layer includes a strain-absorbed layer over the first conductivity type semiconductor layer and a surface-smoothing layer on the strain-absorbed layer filling the cavities. The strain-absorbed layer includes a plurality of cavities in a substantial hexagonal-pyramid form.
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