Semiconductor MOS entrance window for radiation detectors
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United States of America Patent
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Apr 15, 2014
Grant Date -
Dec 13, 2012
app pub date -
Dec 14, 2011
filing date -
Jun 10, 2009
priority date (Note) -
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Abstract
A semiconductor detector device, such as a PIN diode or silicon drift detector, including a substrate with an entrance window. The entrance window comprises a conductive layer, and an insulating layer disposed between the conductive layer and the substrate. The insulating layer and conductive layer cover a center portion of the surface of the substrate.
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