ETCHANTS AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME

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United States of America Patent

APP PUB NO 20120322187A1
SERIAL NO

13366696

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Abstract

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An etchant includes: a persulfate; a fluoride; an inorganic acid; a cyclic amine; a sulfonic acid; and one of an organic acid and a salt thereof.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG DISPLAY CO LTD1 SAMSUNG-RO GIHEUNG-GU YONGIN-SI GYEONGGI-DO 17113

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOI, Shin Il Hwaseong-si, KR 50 135
CHOUNG, Jong-Hyun Hwaseong-si, KR 69 379
JANG, Sanghoon Jeongu-si, KR 2 7
JIN, Youngjun Iksan-si, KR 1 7
KIM, Sanggab Seoul, KR 48 192
KIM, Seon-il Seoul, KR 24 115
KWON, O byoung Wanju-gun, KR 3 7
LEE, Suckjun Jeonju-si, KR 2 9
LIM, Minki Iksan-si, KR 1 7
PARK, Ji-Young Hwaseong-si, KR 61 737
PARK, Youngchul Iksan-si, KR 7 36
SONG, Jeanho Yongin-si, KR 13 61
YU, Inho Iksan-si, KR 3 12

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