APPARATUS FOR FORMING COPPER INDIUM GALLIUM CHALCOGENIDE LAYERS
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United States of America Patent
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Issued Date -
Dec 27, 2012
app pub date -
Sep 4, 2012
filing date -
Oct 26, 2007
priority date (Note) -
Abandoned
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Abstract
A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.
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