PHOTODIODE THAT INCORPORATES A CHARGE BALANCED SET OF ALTERNATING N AND P DOPED SEMICONDUCTOR REGIONS
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United States of America Patent
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Issued Date -
Dec 27, 2012
app pub date -
Jun 21, 2011
filing date -
Jun 21, 2011
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Abstract
A photodiode comprises a first terminal formed in a surface of a semiconductor substrate; a second terminal formed in the substrate surface and spaced apart from the first terminal; and a plurality of adjacent alternating N-type and P-type diffusion regions formed in the substrate surface between the first terminal and the second terminal.
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