Memory device

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United States of America Patent

PATENT NO 8796101
APP PUB NO 20120329237A1
SERIAL NO

13590085

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Abstract

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A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.

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Patent Owner(s)

  • OVONYX MEMORY TECHNOLOGY, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Czubatyj, Wolodymyr Warren, US 67 5758
Sandoval, Regino Caldwell, US 11 229

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