HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE WITH AN INSULATED GATE FORMED IN A TRENCH, AND MANUFACTURING PROCESS THEREOF
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United States of America Patent
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app pub date -
Jun 28, 2012
filing date -
Jun 29, 2011
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Abandoned
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Abstract
A semiconductor device includes: a semiconductor body; a trench having side walls and a bottom; a gate region made of conductive material, extending within the trench; an insulating region, extending along bottom portions of the side walls of the trench and on the bottom of the trench; a gate insulating layer, extending along top portions of the side walls of the trench, laterally with respect to the gate region; a conductive region, extending within the trench, surrounded at the top and laterally by the gate region and surrounded at the bottom and laterally by the insulating region; and a field insulating layer, arranged between the gate region and the conductive region. The gate insulating layer includes thickened portions, each of which contacts the insulating region and has a thickness that increases as the depth increases.
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