Importance

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Abstract

A method for manufacturing a solar ceil from a silicon semiconductor substrate of a first conductivity type, the substrate having a front and a rear surface; and

creating on the rear surface a doped layer of the first conductivity type, as rear surface doped layer as back surface field in the solar cell;creating on the front surface a doped, layer of a second conductivity type as front surface doped layer as an emitter layer in the solar cell, the second conductivity type being opposite to the first conductivity type;wherein the method further includes:creating recesses in the rear surface to pattern the rear surface doped layer of the first conductivity type so as to create back surface field areas, the recesses being void of rear surface doped layer material, andcreating via holes in the substrate, each via hole being positioned within an associated recess.

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First Claim