LAYERED CRUCIBLE FOR CASTING SILICON INGOT AND METHOD OF PRODUCING SAME
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United States of America Patent
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Issued Date -
Jan 17, 2013
app pub date -
Mar 28, 2011
filing date -
Mar 31, 2010
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Provided are a layered crucible for casting a silicon ingot that can suppress dissolution of oxygen into the silicon ingot and a method of producing the same crucible. The layered crucible for casting a silicon ingot is used in the production of a silicon ingot by melting and casting a silicon raw material. The layered crucible comprising: a silica layer provided on the inner side of a mold; and a barium coating layer provided on the surface of the silica layer.
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