THIN FILM TRANSISTOR HAVING PASSIVATION LAYER COMPRISING METAL AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Jan 24, 2013
app pub date -
Dec 7, 2011
filing date -
Jul 22, 2011
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A thin film transistor may include a passivation layer formed of a metal-containing conductive material. The thin film transistor includes: a gate electrode; a gate insulating layer positioned on the gate electrode; a channel layer positioned on the gate insulating layer; a source electrode and a drain electrode which are in contact with the channel layer while being spaced apart from each other; and a passivation layer including a metal-containing conductive material and positioned on the channel layer while being spaced apart from each of the source electrode and the drain electrode. The passivation layer serves to prevent transmission of light, oxygen, water and/or impurities into the channel layer and to improve the electrical characteristics of the thin film transistor.
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