NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20130026487A1
SERIAL NO

13636590

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

An object of the present invention is to provide a nitride semiconductor light emitting element having a novel transparent electrode. The nitride semiconductor light emitting element has the transparent electrode on a p-type nitride semiconductor layer, wherein the p-type nitride semiconductor layer and the transparent electrode can be in good ohmic contact to each other and wherein the variability of the forward voltage (Vf) within the wafer can be reduced.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
NICHIA CORPORATIONANAN-SHI TOKUSHIMA 774-8601

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Musashi, Naoki Anan-shi, JP 10 10

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation