AIN buffer N-polar GaN HEMT profile
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United States of America Patent
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Apr 29, 2014
Grant Date -
Jan 31, 2013
app pub date -
Jul 29, 2011
filing date -
Jul 29, 2011
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Abstract
An N-face GaN HEMT device including a semiconductor substrate, a buffer layer including AlN or AlGaN deposited on the substrate, a barrier layer including AlGaN or AlN deposited on the buffer layer and a GaN channel layer deposited on the barrier layer. The channel layer, the barrier layer and the buffer layer create a two-dimensional electron gas (2-DEG) layer at a transition between the channel layer and the barrier layer.
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