NITROGEN IMPLANTED ULTRAFAST SAMPLING SWITCH
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United States of America Patent
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Issued Date -
Jan 31, 2013
app pub date -
Jul 27, 2012
filing date -
Jul 27, 2011
priority date (Note) -
Abandoned
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Abstract
A method of manufacturing a semiconductor device suitable for optoelectronic switching in response to light of wavelengths in the range 1200 nm to 1600 nm, comprising forming an undoped InGaAs layer on an insulative semiconductor substrate and bonded on opposed sides to a pair of electrical contact layers adapted to constitute the electrodes of a switch, comprising forming the bulk point defects by irradiating the InGaAs layer with Nitrogen ions.
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